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| Si4955DY New Product Vishay Siliconix Asymmetrical Dual P-Channel 30-V/20-V (D-S) MOSFETs PRODUCT SUMMARY VDS (V) Channel-1 - 30 rDS(on) () 0.054 at VGS = - 10 V 0.100 at VGS = - 4.5 V 0.027 at VGS = - 4.5 V Channel-2 - 20 0.035 at VGS = - 2.5 V 0.048 at VGS = - 1.8 V ID (A) - 5.0 - 3.7 - 7.0 - 6.2 - 5.2 FEATURES * TrenchFET(R) Power MOSFETs * Low Gate Drive (2.5 V) Capability For Channel 2 RoHS COMPLIANT APPLICATIONS * Game Station - Load Switch S1 S2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View Ordering Information: SI4955DY-T1-E3 (Lead (Pb)-free) 8 7 6 5 D1 D1 D2 D2 G1 G2 D1 P-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 25 C TA = 70 C TA = 25 C TA = 70 C Symbol VDS VGS ID IDM IS PD TJ, Tstg - 1.7 2.0 1.3 - 0.9 1.1 0.7 - 55 to 150 - 5.0 - 4.0 Channel-1 10 sec Steady State - 30 20 - 3.8 - 3.0 - 20 - 1.7 2 1.3 - 0.9 1.1 0.7 W C - 7.0 - 5.6 Channel-2 10 sec Steady State - 20 8 - 5.3 - 4.2 A Unit V Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 72241 S-61006-Rev. C, 12-Jun-06 www.vishay.com 1 t 10 sec Steady State Steady State Symbol RthJA RthJF Channel-1 Typ 55 90 33 Max 62.5 110 40 58 91 34 Channel-2 Typ Max 62.5 110 40 C/W Unit Si4955DY Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Static Gate Threshold Voltage Gate-Body Leakage VGS(th) IGSS VDS = VGS, ID = - 250 A VDS = VGS, ID = - 250 A VDS = 0 V, VGS = 20 V VDS = 0 V, VGS = 8 V VDS = - 30 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = - 20 V, VGS = 0 V VDS = - 30 V, VGS = 0 V, TJ = 85 C VDS = - 20 V, VGS = 0 V, TJ = 85 C On-State Drain Currenta ID(on) VDS - 5 V, VGS = - 10 V VDS - 5 V, VGS = - 10 V VGS = - 10 V, ID = - 5.0 A VGS = - 4.5 V, ID = - 7.0 A Drain-Source On-State Resistance a Symbol Test Conditions Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Channel-1 VDS = - 15 V, VGS = - 10 V, ID = - 5.0 A Channel-2 VDS = - 10 V, VGS = - 4.5 V, ID = - 7 A Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Channel-1 VDD = - 15 V, RL = - 15 ID - 1 A, VGEN = - 10 V, RG = 6 Channel-2 VDD = - 10 V, RL = 10 ID - 1 A, VGEN = - 4.5 V, RG = 6 IF = - 1.7 A, di/dt = 100 A/s IF = - 1.7 A, di/dt = 100 A/s Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Min - 1.0 - 0.4 Typ Max -3 -1 100 100 -1 -1 -5 -5 Unit V nA A - 20 - 20 0.044 0.022 0.082 0.029 0.039 10 25 - 0.80 - 0.80 12.5 21 2.1 2.6 3.5 6.0 7 20 10 40 30 125 22 85 25 64 15 30 15 60 45 190 35 130 60 90 - 1.2 - 1.2 19 25 0.054 0.027 0.100 0.035 0.048 A rDS(on) VGS = - 4.5 V, ID = - 3.7 A VGS = - 2.5 V, ID = - 6.2 A VGS = - 1.8 V, ID = - 3 A VDS = - 15 V, ID = - 5.0 A VDS = - 15 V, ID = - 3 A IS = - 1.7 A, VGS = 0 V IS = - 1.7 A, VGS = 0 V Forward Transconductancea Diode Forward Voltagea Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time gfs VSD S V Qg Qgs Qgd td(on) tr td(off) tf trr nC ns Notes: a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 72241 S-61006-Rev. C, 12-Jun-06 Si4955DY Vishay Siliconix CHANNEL 1 TYPICAL CHARACTERISTICS 20 VGS = 10 thru 5 V 16 I D - Drain Current (A) I D - Drain Current (A) 16 25 C unless noted 20 12 4V 8 12 8 4 3V 0 0 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) 4 TC = 125 C 25 C - 55 C 0 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) Output Characteristics 0.20 1000 Transfer Characteristics r DS(on) - On-Resistance () C - Capacitance (pF) 0.16 800 Ciss 600 0.12 VGS = 4.5 V 0.08 VGS = 10 V 0.04 400 Coss 200 Crss 0.00 0 4 8 12 16 20 0 0 6 12 18 24 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 10 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 5.0 V 8 1.6 VGS = 10 V ID = 5.0 V 1.4 Capacitance 6 r DS(on) - On-Resistance (Normalized) 4 6 8 10 12 14 1.2 4 1.0 2 0.8 0 0 2 Qg - Total Gate Charge (nC) 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 72241 S-61006-Rev. C, 12-Jun-06 www.vishay.com 3 Si4955DY Vishay Siliconix CHANNEL 1 TYPICAL CHARACTERISTICS 25 C unless noted 30 TJ = 150 C r DS(on) - On-Resistance () 0.16 ID = 2 A 0.12 ID = 5 A I S - Source Current (A) 0.20 10 0.08 TJ = 25 C 0.04 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage 0.6 30 On-Resistance vs. Gate-to-Source Voltage 0.4 V GS(th) Variance (V) ID = 250 A 0.2 Power (W) 25 20 15 0.0 10 - 0.2 5 - 0.4 - 50 0 10- 3 - 25 0 25 50 75 100 125 150 10- 2 10- 1 1 10 100 600 TJ - Temperature (C) Time (sec) Threshold Voltage Single Pulse Power 100 IDM Limited rDS(on) Limited P(t) = 0.0001 I D - Drain Current (A) 10 P(t) = 0.001 1 ID(on) Limited P(t) = 0.01 P(t) = 0.1 0.1 TA = 25 C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) P(t) = 1 P(t) = 10 dc Safe Operating Area www.vishay.com 4 Document Number: 72241 S-61006-Rev. C, 12-Jun-06 Si4955DY Vishay Siliconix CHANNEL 1 TYPICAL CHARACTERISTICS 25 C unless noted 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = R thJA = 90 C/W t1 t2 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (sec) 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (sec) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Document Number: 72241 S-61006-Rev. C, 12-Jun-06 www.vishay.com 5 Si4955DY Vishay Siliconix CHANNEL 2 TYPICAL CHARACTERISTICS 25 C unless noted 20 VGS = 5 thru 2 V 16 I D - Drain Current (A) I D - Drain Current (A) 16 20 12 1.5 V 8 12 8 TC = 125 C 4 25 C - 55 C 4 1V 0 0 1 2 3 4 5 0 0.0 0.4 0.8 1.2 1.6 2.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.10 3000 Transfer Characteristics r DS(on) - On-Resistance () C - Capacitance (pF) 0.08 2500 Ciss 2000 0.06 VGS = 1.8 V 0.04 VGS = 2.5 V 0.02 VGS = 4.5 V 0.00 0 4 8 12 16 20 1500 1000 Coss 500 Crss 0 0 4 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 5 V GS - Gate-to-Source Voltage (V) VDS = 10 V ID = 7 A 4 r DS(on) - On-Resistance (Normalized) 1.4 1.6 VGS = 4.5 V ID = 7 A Capacitance 3 1.2 2 1.0 1 0.8 0 0 4 8 12 16 20 24 Qg - Total Gate Charge (nC) 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (C) Gate Charge On-Resistance vs. Junction Temperature www.vishay.com 6 Document Number: 72241 S-61006-Rev. C, 12-Jun-06 Si4955DY Vishay Siliconix CHANNEL 2 TYPICAL CHARACTERISTICS 25 C unless noted 20 0.10 r DS(on) - On-Resistance () I S - Source Current (A) 10 0.08 0.06 ID = 7 A TJ = 150 C 0.04 TJ = 25 C 0.02 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 0.4 30 On-Resistance vs. Gate-to-Source Voltage 0.3 V GS(th) Variance (V) ID = 250 A 0.2 Power (W) 25 20 0.1 15 0.0 10 - 0.1 5 0 10- 3 - 0.2 - 50 - 25 0 25 50 75 100 125 150 10- 2 10- 1 1 10 100 600 TJ - Temperature (C) Time (sec) Threshold Voltage Single Pulse Power 100 IDM Limited rDS(on) Limited P(t) = 0.0001 I D - Drain Current (A) 10 P(t) = 0.001 1 ID(on) Limited P(t) = 0.01 P(t) = 0.1 TA = 25 C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) P(t) = 1 P(t) = 10 dc 0.1 Safe Operating Area Document Number: 72241 S-61006-Rev. C, 12-Jun-06 www.vishay.com 7 Si4955DY Vishay Siliconix CHANNEL 2 TYPICAL CHARACTERISTICS 25 C unless noted 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 91 C/W Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (sec) 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (sec) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72241. www.vishay.com 8 Document Number: 72241 S-61006-Rev. C, 12-Jun-06 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 |
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